Infineon IPD90N04S4-02: High-Performance N-Channel MOSFET for Advanced Power Management

The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in modern electronics places immense demands on power switching components. At the forefront of meeting these challenges is the Infineon IPD90N04S4-02, a state-of-the-art N-Channel power MOSFET engineered for superior performance in advanced power management applications.

This MOSFET is built using Infineon's proprietary OptiMOS™ technology, a benchmark in the industry for achieving an exceptional balance between low on-state resistance and high switching speed. The device boasts an ultra-low RDS(on) of just 1.8 mΩ (max. at VGS = 10 V), which is a critical figure of merit. This remarkably low resistance directly translates to minimized conduction losses, allowing for higher efficiency operation and reducing the need for extensive thermal management solutions. This is particularly vital in space-constrained applications where heat dissipation is a primary concern.

Furthermore, the IPD90N04S4-02 features a low gate charge (Qg) and excellent switching characteristics. These parameters ensure that the transitions between on and off states are both rapid and clean, significantly reducing switching losses. This combination of low RDS(on) and optimized switching performance makes this MOSFET an ideal choice for high-frequency switch-mode power supplies (SMPS), DC-DC converters, and motor control circuits where every percentage point of efficiency is crucial.

The device is rated for a drain-source voltage (VDS) of 40 V and a continuous drain current (ID) of 180 A, providing robust performance for a wide array of demanding 12V and 24V systems. Its high current handling capability makes it suitable for demanding roles such as synchronous rectification in server PSUs and power management in automotive systems. The MOSFET is also characterized by its high ruggedness and Avalanche energy rating, enhancing system reliability under stressful or unforeseen operational conditions.

Housed in a space-saving SuperSO8 package, the IPD90N04S4-02 offers an excellent power-to-footprint ratio. This package not only facilitates compact design but also improves thermal performance compared to standard SO-8 packages, enabling higher power dissipation.

ICGOODFIND: The Infineon IPD90N04S4-02 stands out as a top-tier component for designers aiming to maximize efficiency and power density. Its industry-leading low RDS(on), exceptional switching performance, and robust package make it an indispensable solution for the next generation of computing, automotive, and industrial power systems.

Keywords: OptiMOS™ Technology, Low RDS(on), High Efficiency, Synchronous Rectification, Power Density.