Infineon IPD80R1K4CE: A High-Performance Power MOSFET for Efficient Switching Applications
The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. At the forefront of this innovation is the Infineon IPD80R1K4CE, a state-of-the-art power MOSFET engineered to excel in a wide array of demanding switching applications. This device encapsulates Infineon's advanced semiconductor technology, offering system designers a powerful tool to minimize losses and maximize performance.
A key highlight of the IPD80R1K4CE is its exceptionally low on-state resistance (RDS(on)) of just 1.4 mΩ. This ultra-low resistance is critical for minimizing conduction losses when the device is fully switched on. The result is significantly reduced power dissipation in the form of heat, which directly translates to higher overall system efficiency, cooler operation, and the potential for smaller heatsinks or simplified thermal management solutions. This characteristic is paramount for applications like switch-mode power supplies (SMPS) and motor drives, where every watt saved contributes to a greener and more cost-effective design.
Complementing its low conduction losses, the MOSFET is built on Infineon's proprietary OptiMOS 6 technology platform. This advanced process technology ensures not only low RDS(on) but also superior switching performance. The device features optimized internal gate resistance and capacitances, enabling very fast switching transitions. This reduces switching losses, which are a dominant factor in high-frequency operation. The ability to switch efficiently at higher frequencies allows designers to shrink the size of passive components like inductors and capacitors, leading to more compact and power-dense final products.
The IPD80R1K4CE is housed in a robust TOLL (TO-Leadless) package. This surface-mount package offers an excellent trade-off between compact size and thermal/electrical performance. Its leadless design minimizes parasitic inductance, which is crucial for maintaining signal integrity and preventing voltage spikes during fast switching events. Furthermore, the package features an exposed top side that facilitates efficient heat transfer to an external cooler, ensuring the junction temperature is kept within safe limits even under high-stress conditions.
With a voltage rating of 80 V and a continuous current (ID) capability of 480 A at 25°C, this MOSFET is exceptionally versatile. It is ideally suited for a broad spectrum of applications, including:
Server and Telecom Power Supplies (SMPS)
Synchronous Rectification Circuits
Industrial Motor Drives and Controls
Solar Inverters and Energy Storage Systems
High-Current DC-DC Converters
ICGOOODFIND: The Infineon IPD80R1K4CE stands out as a premier solution for engineers seeking to push the boundaries of efficiency and power density. Its combination of ultra-low RDS(on), fast switching characteristics enabled by OptiMOS 6 technology, and the electrically efficient TOLL package makes it an outstanding choice for the most demanding power conversion tasks. It is a component that directly contributes to creating smaller, cooler, and more energy-efficient electronic systems.
Keywords: OptiMOS 6 Technology, Low RDS(on), High-Efficiency Switching, TOLL Package, Power Density.
