Infineon IPB180N04S400ATMA1: High-Performance 40V OptiMOS Power MOSFET for Automotive and Industrial Applications
The relentless push for higher efficiency, greater power density, and enhanced reliability in electronic systems defines modern automotive and industrial design. At the heart of this evolution are advanced power semiconductors, with the Infineon IPB180N04S400ATMA1 standing out as a premier solution. This 40V OptiMOS power MOSFET is engineered to meet the stringent demands of these critical sectors, delivering a combination of ultra-low on-state resistance and superior switching performance.
A key metric for any power MOSFET is its R DS(on), which directly impacts conduction losses and overall efficiency. The IPB180N04S400ATMA1 boasts an exceptionally low maximum R DS(on) of just 0.8 mΩ at 10 V. This remarkably low value ensures minimal power is wasted as heat during operation, making it ideal for high-current applications such as motor control systems in industrial automation and high-power DC-DC converters in electric vehicles (EVs). This efficiency translates directly into cooler running systems, reduced cooling requirements, and potentially longer system lifespans.
Beyond its static performance, this MOSFET excels in dynamic operation. The OptiMOS technology platform is renowned for its low gate charge (Q G) and outstanding figure-of-merit (FOM), which significantly reduces switching losses. This is paramount in high-frequency switching power supplies and PWM motor drives, where faster switching enables the use of smaller passive components like inductors and capacitors, thereby increasing power density and reducing the overall system footprint and cost.
Recognizing the harsh environments of its target applications, the IPB180N04S400ATMA1 is designed with robustness in mind. It is AEC-Q101 qualified, guaranteeing its reliability for use in automotive electronics, where it must withstand extreme temperatures, humidity, and intense vibration. Its high avalanche ruggedness and excellent thermal performance, facilitated by its proprietary DirectFET package, ensure stable operation under stressful conditions, including overloads and short circuits. This package also offers a low-profile design and a dual-sided cooling capability, which is crucial for space-constrained and thermally challenging designs.
In summary, the Infineon IPB180N04S400ATMA1 is not just a component but a strategic enabler for next-generation power designs. Its blend of extreme efficiency, robust switching characteristics, and proven reliability makes it a top-tier choice for engineers pushing the boundaries of performance in the automotive and industrial markets.
ICGOO FIND: The Infineon IPB180N04S400ATMA1 is a high-performance 40V power MOSFET that sets a benchmark for efficiency and robustness. Its ultra-low 0.8 mΩ R DS(on) minimizes conduction losses, while its optimized switching characteristics reduce dynamic losses. Housed in a thermally efficient DirectFET package and AEC-Q101 qualified, it is the optimal choice for demanding automotive and industrial applications, including motor drives, BRUSHless DC (BLDC) motor control, and high-density power conversion systems.
Keywords:
1. Ultra-low R DS(on)
2. AEC-Q101 Qualified
3. High Efficiency
4. OptiMOS Technology
5. DirectFET Package
